P. Laskowski, M. Olszacki, M. Al Bahri, P. Pons, M. Jasiorski
{"title":"High energy electron degradation of the bonding connections","authors":"P. Laskowski, M. Olszacki, M. Al Bahri, P. Pons, M. Jasiorski","doi":"10.1109/IPFA.2014.6898190","DOIUrl":null,"url":null,"abstract":"The influence of the high energy electrons on the wire bonding connections has been investigated. To degrade the devices 6MeV electron source has been employed. The irradiation resulted in both: bonding rupture force and ohmic resistance decrease. Device degradation level was additionally evaluated by means of the electron microscopy inspection.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The influence of the high energy electrons on the wire bonding connections has been investigated. To degrade the devices 6MeV electron source has been employed. The irradiation resulted in both: bonding rupture force and ohmic resistance decrease. Device degradation level was additionally evaluated by means of the electron microscopy inspection.
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