Binghai Liu, E. Er, S. Zhao, C. Chen, A. G. Boon, Kunihiko Takahashi, C. Subbu, J. Lam
{"title":"Study on the high via resistance by TEM failure analysis","authors":"Binghai Liu, E. Er, S. Zhao, C. Chen, A. G. Boon, Kunihiko Takahashi, C. Subbu, J. Lam","doi":"10.1109/IPFA.2014.6898200","DOIUrl":null,"url":null,"abstract":"In this work we reported a case study on ET (electrical testing) failure with via high resistance issue. In order to understand the failure mechanism and root cause behind the high via resistance, detailed TEM(transmission electron microscope) analysis was performed by using various TEM FA (failure analysis)techniques, including EDX, EELS analysis. It was found out that high via resistance arose from the process drift-induced Al extrusion and poor barrier metal coverage at via bottom. The correlation between the physical signatures identified by TEM FA and the associated processes were discussed for the root cause understanding.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work we reported a case study on ET (electrical testing) failure with via high resistance issue. In order to understand the failure mechanism and root cause behind the high via resistance, detailed TEM(transmission electron microscope) analysis was performed by using various TEM FA (failure analysis)techniques, including EDX, EELS analysis. It was found out that high via resistance arose from the process drift-induced Al extrusion and poor barrier metal coverage at via bottom. The correlation between the physical signatures identified by TEM FA and the associated processes were discussed for the root cause understanding.
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