D. Chao, Frederick T. Chen, Y. Hsu, Wenhsing Liu, Chain-Ming Lee, Chih-Wei Chen, Weisu Chen, M. Kao, M. Tsai
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引用次数: 2
Abstract
In this paper, we demonstrate the use of a slow-quench waveform for multi-level phase change memory operation and compare the use of Ge21Sn10Sb15Te54 (GSST) and Ge2Sb2Te5 (GST). A faster multilevel operation is possible with the use of GSST, owing to its faster crystallization speed
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