{"title":"Biodegradable zinc oxide thin film transistors","authors":"J. Kettle, D. Kumar","doi":"10.23919/empc53418.2021.9584985","DOIUrl":null,"url":null,"abstract":"In this work, biodegradable thin film transistors (TFTs) based on Zinc Oxide (ZnO) active layers are reported. To manufacture high performing devices, a planarization layer was applied onto the biodegradable substrate which led to a substantial decrease in the surface roughness and ensured that the substrate were smooth enough for device fabrication. ZnO TFTs were fabricated onto the planarized surface, tested and data supplied from the transfer curves showed a mobility of 2.9 cm2/s, an on/off ratio of 8 × 106 and a threshold voltage of 2.5 V. Methods to further improve device performance and future applications are discussed.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/empc53418.2021.9584985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, biodegradable thin film transistors (TFTs) based on Zinc Oxide (ZnO) active layers are reported. To manufacture high performing devices, a planarization layer was applied onto the biodegradable substrate which led to a substantial decrease in the surface roughness and ensured that the substrate were smooth enough for device fabrication. ZnO TFTs were fabricated onto the planarized surface, tested and data supplied from the transfer curves showed a mobility of 2.9 cm2/s, an on/off ratio of 8 × 106 and a threshold voltage of 2.5 V. Methods to further improve device performance and future applications are discussed.