An effective one-trap-level CAD model for the general SOC integration platform - particle-beam stand (PBS) - when modeling proton-caused local semi-insulating regions

Abstract

A /spl pi/ technology (= particle-enhanced isolation) was proposed to employ energetic proton beams on the already-manufactured mixed-mode IC wafers (prior to packaging) for the suppression of undesirable substrate coupling (C. P. Liao et al., April 4, 2000). However, up to this day the physics behind this proton-caused defect phase is never clear. An effective 1-level defect model is constructed using experimental results and existing single-trap-level theory (Moll J. L. 1964) and TRIM (or SRIM) (http://www.srim.org/) code-simulated parameters. The found effective single trap level (E/spl tau/) is at about +0.24 eV in n-Si and at -0.34 eV in p-Si, measuring from the center of the energy band-gap.