Performance Study of Short Channel Symmetric Double Gate Gaussian Doped Ferroelectric FET for Analog and Digital Applications

Abstract

In the present work, performance of short channel symmetric Double Gate Gaussian Doped Ferroelectric FET (DGGDFEFET) has been studied by using fully coupled TCAD simulations with Landau Khalatnikov equation. Ferroelectric layer of PVDF-TrFE (polyvinyledenedifluoride-trifluoroethylene) is considered as gate insulator with an intermediate layer of SiO2. The channel is non-uniformily doped in vertical direction and the analog and digital performance of DGGDFEFET has been investigated by obtaining transfer characteristics, subthreshold swing, transconductance ($g_{m}$), transconductance generation factor (TGF), output characteristics and output conductance ($g_{d}$). It has been demonstrated that due to negative capacitance and vertical non-uniform doping, DGGDFEFET shows superior analog and digital performance since it offers super steep transfer characteristics and substantially improved TGF and output characteristics.