The effects of preparation conditions of SIMOX samples on the photoluminescence spectra of their buried oxide layer

W. Skorupa, L. Rebohle, A. Revesz, H. Hughes
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Abstract

The purpose of this work was to study the effects of oxygen implant conditions and post-implant processes on the photoluminescence (PL) behavior of the BOX layer of SIMOX structures. The effect of heat treatment of pseudo-SIMOX structures (top Si layer removed) is also reported; this point is relevant to the defect structure of BOX layers. An important aspect of this work is that the samples used in this work have been extensively studied by various electrical and other techniques so that the PL spectra could be correlated with the results of those studies.
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研究了SIMOX样品制备条件对其埋藏氧化层光致发光光谱的影响
本研究的目的是研究氧植入条件和植入后工艺对SIMOX结构的BOX层光致发光(PL)行为的影响。本文还报道了热处理对去除顶部Si层的伪simox结构的影响;这一点与BOX层的缺陷结构有关。这项工作的一个重要方面是,在这项工作中使用的样品已经通过各种电和其他技术进行了广泛的研究,以便PL光谱可以与这些研究的结果相关联。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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