Y. Miyaoku, M. Miura-Mattausch, A. Tone, H. Mattausch, K. Matsuura, D. Ikoma
{"title":"Analysis of IGBT Charging/Discharging Mechanism for Accurate Compact Modeling","authors":"Y. Miyaoku, M. Miura-Mattausch, A. Tone, H. Mattausch, K. Matsuura, D. Ikoma","doi":"10.1109/ISDCS.2019.8719093","DOIUrl":null,"url":null,"abstract":"The trench-type IGBT has been intensively investigated for very high-voltage applications. Our purpose in this study is to clarify the switching features of the IGBT for developing an accurate compact model, which can predict the switching losses accurately. The main focus is therefore given on the carrier dynamics within the device during switching. It is demonstrated that the ambipolar feature of the bipolar function of IGBT leads to a fast carrier response during the switching. The large amount of the majority-carrier existence realizes this rapid reaction of the carrier dynamics in response to the switching condition.","PeriodicalId":293660,"journal":{"name":"2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2019.8719093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The trench-type IGBT has been intensively investigated for very high-voltage applications. Our purpose in this study is to clarify the switching features of the IGBT for developing an accurate compact model, which can predict the switching losses accurately. The main focus is therefore given on the carrier dynamics within the device during switching. It is demonstrated that the ambipolar feature of the bipolar function of IGBT leads to a fast carrier response during the switching. The large amount of the majority-carrier existence realizes this rapid reaction of the carrier dynamics in response to the switching condition.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
