Takao Yamamoto, Y. Fukunaga, D. Ikoma, M. Miura-Mattausch, D. Navarro, H. Mattausch
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引用次数: 0
Abstract
It has been measured that the I-V characteristics of the embedded diode in SiC MOSFETs shows an unexpected Vgs dependence. With the use of 2D-device simulation, we have analyzed the reason for this phenomenon. It was found that a non-negligible bipolar effect is the origin. Further, a compact model has been developed to reproduce the measured Vgs dependence. The model enables the prediction of this unexpected Vgs dependence based on the device’s structural features.
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