Analysis of frequency-dependent lossy transmission lines driven by CMOS gates

Xiaochun Li, Junfa Mao, M. Swaminathan
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引用次数: 2

Abstract

This paper introduces an accurate FDTD-based method for analysis of time domain response of frequency-dependent lossy transmission lines driven by CMOS gates. MOS transistors are modeled as the nonlinear alpha-power law model that includes the carriers' velocity saturation effect of short-channel devices. The dynamic behavior of CMOS gates during switching is defined in seven operation regions. Skin effects of lossy transmission line are included in the proposed method and analyzed with FDTD. The proposed method is accurate by comparison between the numerical results of the proposed method and the simulation results of SPICE.
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CMOS门驱动的频率相关损耗传输线分析
本文介绍了一种基于fdtd的精确分析CMOS门驱动的含频损耗传输线时域响应的方法。采用非线性幂律模型对MOS晶体管进行建模,其中考虑了短通道器件载流子的速度饱和效应。在七个工作区域中定义了CMOS门在开关过程中的动态行为。该方法考虑了损耗传输线的趋肤效应,并用时域有限差分法进行了分析。将所提方法的数值结果与SPICE的仿真结果进行了比较,证明了所提方法的准确性。
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