{"title":"Limits to Normal Incidence Electroabsorption Modulation in GaInAs/InP Multiple Quantum Well Diodes","authors":"P. J. Stevens, G. Parry","doi":"10.1364/qwoe.1989.tue12","DOIUrl":null,"url":null,"abstract":"We have recently developed a technique for optimizing the design of GaAs/(GaAl)As MQW electroabsorption modulators and investigating their potential performance [1]. In this paper, we develop the same technique for the (GaIn)As/InP system whose operating wavelength of around 1600nm is close to that of the low loss window of optical fibres.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"310 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Wells for Optics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qwoe.1989.tue12","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We have recently developed a technique for optimizing the design of GaAs/(GaAl)As MQW electroabsorption modulators and investigating their potential performance [1]. In this paper, we develop the same technique for the (GaIn)As/InP system whose operating wavelength of around 1600nm is close to that of the low loss window of optical fibres.
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