S. Park, R. Morgan, Y. Z. Hu, M. Lindberg, S. Koch, N. Peyghambarian
Lately, quantum confinement effects in semiconductor microstructures have been studied because of their interesting physics and possible nonlinear optical device applications.1-2 The basic optical properties of quantum dots (QDs), which exhibit 3D-confinement effects, have recently been discussed theoretically.1 In this paper, we report a comprehensive experimental study of the steady-state nonlinear optical properties of specially-prepared quantum-confined CdSe microcrystallites suspended in a transparent borosilicate glass matrix.2 Three samples were investigated. The average crystallite diameters of these samples were measured using transmission electron microscopy to be 30 Å, 44 Å, and 79 Å, respectively.2 For bulk CdSe, the exciton Bohr radius (aex) is ≅ 56 Å therefore, our samples fall within the so-called intermediate confinement regime (ah< R
{"title":"Nonlinear Optical Properties of Quantum-Confined CdSe Microcrystallites","authors":"S. Park, R. Morgan, Y. Z. Hu, M. Lindberg, S. Koch, N. Peyghambarian","doi":"10.1364/JOSAB.7.002097","DOIUrl":"https://doi.org/10.1364/JOSAB.7.002097","url":null,"abstract":"Lately, quantum confinement effects in semiconductor microstructures have been studied because of their interesting physics and possible nonlinear optical device applications.1-2 The basic optical properties of quantum dots (QDs), which exhibit 3D-confinement effects, have recently been discussed theoretically.1 In this paper, we report a comprehensive experimental study of the steady-state nonlinear optical properties of specially-prepared quantum-confined CdSe microcrystallites suspended in a transparent borosilicate glass matrix.2 Three samples were investigated. The average crystallite diameters of these samples were measured using transmission electron microscopy to be 30 Å, 44 Å, and 79 Å, respectively.2 For bulk CdSe, the exciton Bohr radius (aex) is ≅ 56 Å therefore, our samples fall within the so-called intermediate confinement regime (ah< R","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132209140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Pan, L. C. West, S. Walker, R. Malik, J. Walker
Recently, a new type of intersubband transition in GaAs quantum wells was observed by West and Eglash [1,2]. This transition differed from previous intersubband transitions [3] in that it had a direct, fully allowed, dipole between the envelope wavefunctions rather than the Bloch wavefunctions, was spectrally narrow, and temperature stable. This particular type of intersubband transition was termed a quantum well envelope subband (or state) transition “QWEST.” The Stark energy shift between the first and second conduction subbands in a GaAs quantum well was observed by Harwit and Harris [4]. Infrared detectors utilizing the QWEST have also been made [5] recently.
{"title":"Inducing normally forbidden transitions within the conduction band of GaAs quantum wells","authors":"J. Pan, L. C. West, S. Walker, R. Malik, J. Walker","doi":"10.1063/1.103693","DOIUrl":"https://doi.org/10.1063/1.103693","url":null,"abstract":"Recently, a new type of intersubband transition in GaAs quantum wells was observed by West and Eglash [1,2]. This transition differed from previous intersubband transitions [3] in that it had a direct, fully allowed, dipole between the envelope wavefunctions rather than the Bloch wavefunctions, was spectrally narrow, and temperature stable. This particular type of intersubband transition was termed a quantum well envelope subband (or state) transition “QWEST.” The Stark energy shift between the first and second conduction subbands in a GaAs quantum well was observed by Harwit and Harris [4]. Infrared detectors utilizing the QWEST have also been made [5] recently.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117234345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-12-01DOI: 10.1016/0038-1101(89)90304-3
S. Goodnick, P. Lugli, W. Knox, D. Chemla
{"title":"Monte Carlo Simulation of Femtosecond Spectroscopy in Semiconductor Heterostructures","authors":"S. Goodnick, P. Lugli, W. Knox, D. Chemla","doi":"10.1016/0038-1101(89)90304-3","DOIUrl":"https://doi.org/10.1016/0038-1101(89)90304-3","url":null,"abstract":"","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128989229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Optical modulators using the quantum confined stark effect1 in GaAs/AlxGa1−x As multiple quantum wells (MQWs) have been studied extensively for their potential applications in integrated optoelectronic devices and optical computing systems. This paper investigates the increased performance that can be achieved by operating the device at low temperatures and by improving the quality of the MQW layers.
{"title":"Temperature-Dependent Characteristics of GaAs/AlGaAs Multiple Quantum Well Optical Modulators","authors":"R. Bailey, R. Sahai, C. Lastufka, K. Vural","doi":"10.1063/1.344099","DOIUrl":"https://doi.org/10.1063/1.344099","url":null,"abstract":"Optical modulators using the quantum confined stark effect1 in GaAs/AlxGa1−x As multiple quantum wells (MQWs) have been studied extensively for their potential applications in integrated optoelectronic devices and optical computing systems. This paper investigates the increased performance that can be achieved by operating the device at low temperatures and by improving the quality of the MQW layers.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121367707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nonlinear optical properties of quantum wells (QW’s) and superlattices (SL’s) have recently become an object of intense studies 1,2. Quantum confinement of carriers leads to existence of strong resonances in the absorption spectra attributed to both conduction-to-valence band 3 and intersubband 4 transition. That, in turn, leads to large optical nonlinearities. Third order nonlinearity in symmetrical QW’s and SL’s have been studied by numerous authors 5-8. More recently, calculations of second order nonlinear coefficients of asymmetric QW structures were made for interband 9,10 and intersubband 10,11 transitions. Second -order nonlinear properties based on interband processes in various asymmetric QW structures were evaluated in Ref 10 for wide range of materials and QW geometries. It was snown that although both second harmonic generation (SHG) and linear electro-optic (LEO) coefficient are large (on the order of 10−10m /V) they are at least an order of magnitude smaller than what could be expected from a two-level asymmetric system with comparable transition strength. The reason for that is compensation of second-order susceptibilities associated with various ground and excited states and having opposite signs.
{"title":"Second-order intersubband nonlinear optical susceptibilities of asymmetric quantum well structures.","authors":"J. Khurgin","doi":"10.1364/JOSAB.6.001673","DOIUrl":"https://doi.org/10.1364/JOSAB.6.001673","url":null,"abstract":"Nonlinear optical properties of quantum wells (QW’s) and superlattices (SL’s) have recently become an object of intense studies 1,2. Quantum confinement of carriers leads to existence of strong resonances in the absorption spectra attributed to both conduction-to-valence band 3 and intersubband 4 transition. That, in turn, leads to large optical nonlinearities. Third order nonlinearity in symmetrical QW’s and SL’s have been studied by numerous authors 5-8. More recently, calculations of second order nonlinear coefficients of asymmetric QW structures were made for interband 9,10 and intersubband 10,11 transitions. Second -order nonlinear properties based on interband processes in various asymmetric QW structures were evaluated in Ref 10 for wide range of materials and QW geometries. It was snown that although both second harmonic generation (SHG) and linear electro-optic (LEO) coefficient are large (on the order of 10−10m /V) they are at least an order of magnitude smaller than what could be expected from a two-level asymmetric system with comparable transition strength. The reason for that is compensation of second-order susceptibilities associated with various ground and excited states and having opposite signs.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121999048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Hafich, J. Quigley, R. E. Owens, G. Y. Robinson, Du Li, N. Ōtsuka
The materials system AlGaAs/GaAs has been used extensively for synthesis of quantum well (QW) optoelectronic devices. The III-V alloy InGaP provides an alternative to AlGaAs for confinement of GaAs QWs. At the composition for lattice matching to GaAs, In0.48Ga0.52P exhibits a room temperature bandgap of 1.89 eV, somewhat larger than that of Al0.3Ga0.7As, and the In0.48Ga0.52P/GaAs valence band offset (ΔEv) is about 0.3 eV, larger than that of the Al0.3Ga0.52As/GaAs heterojunction. Furthermore, InGaP exhibits a lower concentration of deep levels than AlGaAs, and InGaP does not oxidize as readily as AlGaAs. InGaP/GaAs QWs have been previously reported by Razeghi et al., who used metalorganic chemical vapor deposition to grow wells as narrow as 15Å(1) We report here the growth of InGaP/GaAs QWs by gas-source molecular beam epitaxy (GSMBE). Single QWs as narrow as 6Å and multiple QW superlattices with abrupt interfaces are described.
{"title":"High Quality Quantum Wells of InGaP/GaAs Grown by Molecular Beam Epitaxy","authors":"M. Hafich, J. Quigley, R. E. Owens, G. Y. Robinson, Du Li, N. Ōtsuka","doi":"10.1063/1.101035","DOIUrl":"https://doi.org/10.1063/1.101035","url":null,"abstract":"The materials system AlGaAs/GaAs has been used extensively for synthesis of quantum well (QW) optoelectronic devices. The III-V alloy InGaP provides an alternative to AlGaAs for confinement of GaAs QWs. At the composition for lattice matching to GaAs, In0.48Ga0.52P exhibits a room temperature bandgap of 1.89 eV, somewhat larger than that of Al0.3Ga0.7As, and the In0.48Ga0.52P/GaAs valence band offset (ΔEv) is about 0.3 eV, larger than that of the Al0.3Ga0.52As/GaAs heterojunction. Furthermore, InGaP exhibits a lower concentration of deep levels than AlGaAs, and InGaP does not oxidize as readily as AlGaAs. InGaP/GaAs QWs have been previously reported by Razeghi et al., who used metalorganic chemical vapor deposition to grow wells as narrow as 15Å(1) We report here the growth of InGaP/GaAs QWs by gas-source molecular beam epitaxy (GSMBE). Single QWs as narrow as 6Å and multiple QW superlattices with abrupt interfaces are described.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114515112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Saeta, R. Fischer, B. Greene, R. Spitzer, B. A. Wilson
Optical pump-probe experiments on bulk GaAs and conventional type I GaAs/GaAlAs multiquantum well structures (MQWS) have determined the time scales on which photoexcited carriers (1) attain thermal equilibrium among themselves, (2) scatter out of the zone-center Γ-valley to accessible X- or L-valleys, (3) relax their excess energy to the lattice, and (4) recombine.(1-3) In most cases, carrier thermalization (via carrier-carrier collisions) and intervalley scattering occur in less than 100 fs, lattice heating in picoseconds, and recombination in nanoseconds to microseconds and longer. In these direct gap systems, photoexcited electrons and holes remain in the same layer or region of the crystal. In type II structures, the highest valence band occurs in one layer and the lowest conduction band in the other; excited carriers spatially segregate, one carrier remaining in the narrower bandgap material, the other transferring to the lower energy states occurring in the adjacent layer. We have determined that in a type II GaAs/AIAs MQWS having 8 monolayers of GaAs alternating with 25 monolayers of AlAs photoexcited electrons transfer from the Γ-valley of the GaAs layers to the X-valley of adjacent AlAs layers within 100 fs.
{"title":"Interlayer Transport of Photoexcited Electrons in Type II Gallium-Arsenide/Aluminum-Arsenide Multi-Quantum Well Structures","authors":"P. Saeta, R. Fischer, B. Greene, R. Spitzer, B. A. Wilson","doi":"10.1364/qwoe.1989.mb3","DOIUrl":"https://doi.org/10.1364/qwoe.1989.mb3","url":null,"abstract":"Optical pump-probe experiments on bulk GaAs and conventional type I GaAs/GaAlAs multiquantum well structures (MQWS) have determined the time scales on which photoexcited carriers (1) attain thermal equilibrium among themselves, (2) scatter out of the zone-center Γ-valley to accessible X- or L-valleys, (3) relax their excess energy to the lattice, and (4) recombine.(1-3) In most cases, carrier thermalization (via carrier-carrier collisions) and intervalley scattering occur in less than 100 fs, lattice heating in picoseconds, and recombination in nanoseconds to microseconds and longer. In these direct gap systems, photoexcited electrons and holes remain in the same layer or region of the crystal. In type II structures, the highest valence band occurs in one layer and the lowest conduction band in the other; excited carriers spatially segregate, one carrier remaining in the narrower bandgap material, the other transferring to the lower energy states occurring in the adjacent layer. We have determined that in a type II GaAs/AIAs MQWS having 8 monolayers of GaAs alternating with 25 monolayers of AlAs photoexcited electrons transfer from the Γ-valley of the GaAs layers to the X-valley of adjacent AlAs layers within 100 fs.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"111 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120942438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Islam, E. Sunderman, I. Bar-Joseph, N. Sauer, T. Chang
We passively modelocked a NaCI color center laser (CCL) by using multiple quantum well (MQW) saturable absorbers to produce pulses around 260fsec. The laser is an all solid-state source lasing around 1.6-1.7μm and formed in a single cavity. Silberberg, et al. [1], first modelocked a semiconductor diode laser using MQW’s, and Haus and Silberberg [2] theorized that the fast saturable absorber component plays a major role in the formation of their ~ 1.5psec pulses. This fast absorber component results from MQW absorption bleaching by short-lived excitons formed near the band gap of the MQW. The excitonic lifetime of 200±30fsec measured in our MQW’s [3] is comparable to our pulse widths. Consequently, the fast saturable component dominates the pulse shaping and may limit the pulse width in our experiments.
{"title":"Multiple Quantum Well Passive Modelocking of NaCl Color Center Laser","authors":"M. Islam, E. Sunderman, I. Bar-Joseph, N. Sauer, T. Chang","doi":"10.1063/1.100753","DOIUrl":"https://doi.org/10.1063/1.100753","url":null,"abstract":"We passively modelocked a NaCI color center laser (CCL) by using multiple quantum well (MQW) saturable absorbers to produce pulses around 260fsec. The laser is an all solid-state source lasing around 1.6-1.7μm and formed in a single cavity. Silberberg, et al. [1], first modelocked a semiconductor diode laser using MQW’s, and Haus and Silberberg [2] theorized that the fast saturable absorber component plays a major role in the formation of their ~ 1.5psec pulses. This fast absorber component results from MQW absorption bleaching by short-lived excitons formed near the band gap of the MQW. The excitonic lifetime of 200±30fsec measured in our MQW’s [3] is comparable to our pulse widths. Consequently, the fast saturable component dominates the pulse shaping and may limit the pulse width in our experiments.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126816489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The buried heterostructure (BH) laser1 is one of the most attractive index guided stripe geometry semiconductor lasers because of the combination of strong lateral index guiding and absolute current confinement provided by a heterostructure discontinuity in the lateral direction. This structure is difficult to fabricate, however, because of the need for processing high quality narrow stripe etched mesas with a high quality regrowth interface at the edges of the active region. The regrowth is especially difficult2 for AlGaAs-GaAs BH lasers having higher aluminum composition confining layers. Various1,3-8 AlGaAs-GaAs BH laser structures have been reported. In this work, we report the characteristics of long wavelength (λ> 1 μm) strained layer InGaAs-GaAs-AlGaAs quantum well buried heterostructure lasers9-11 formed by wet chemical etching and a two-step MOCVD growth process. The relatively low aluminum composition of the confining layers allows for high quality regrowth interfaces and effective use2,12 of a silicon dioxide mask for selective epitaxy limited to the etched regions. The structures reported here have active region stripe widths of ~3.5 μm, an emission wavelength of λ ~ 1.074 μm, and threshold currents of less than 7 mA (cavity length 405 μm). Output powers in excess of 130 mW per uncoated facet with total differential quantum efficiencies of greater than 60% have been observed. Near-field patterns indicate that the lasers are operating on a fundamental lateral mode and are stable to more than thirty times laser threshold.
{"title":"InGaAs-GaAs Strained Layer Quantum Well Buried Heterostructure Lasers (λ> 1 μm) by Metalorganic Chemical Vapor Deposition","authors":"P. York, K. Beernink, G. E. Fernández, J. Coleman","doi":"10.1063/1.100935","DOIUrl":"https://doi.org/10.1063/1.100935","url":null,"abstract":"The buried heterostructure (BH) laser1 is one of the most attractive index guided stripe geometry semiconductor lasers because of the combination of strong lateral index guiding and absolute current confinement provided by a heterostructure discontinuity in the lateral direction. This structure is difficult to fabricate, however, because of the need for processing high quality narrow stripe etched mesas with a high quality regrowth interface at the edges of the active region. The regrowth is especially difficult2 for AlGaAs-GaAs BH lasers having higher aluminum composition confining layers. Various1,3-8 AlGaAs-GaAs BH laser structures have been reported. In this work, we report the characteristics of long wavelength (λ> 1 μm) strained layer InGaAs-GaAs-AlGaAs quantum well buried heterostructure lasers9-11 formed by wet chemical etching and a two-step MOCVD growth process. The relatively low aluminum composition of the confining layers allows for high quality regrowth interfaces and effective use2,12 of a silicon dioxide mask for selective epitaxy limited to the etched regions. The structures reported here have active region stripe widths of ~3.5 μm, an emission wavelength of λ ~ 1.074 μm, and threshold currents of less than 7 mA (cavity length 405 μm). Output powers in excess of 130 mW per uncoated facet with total differential quantum efficiencies of greater than 60% have been observed. Near-field patterns indicate that the lasers are operating on a fundamental lateral mode and are stable to more than thirty times laser threshold.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128709395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
There has been much interest recently in the electric field dependence of the optical absorption in multiple quantum wells (MQWs). This phenomenon, known as the Quantum Confined Stark Effect (QCSE),[1] has many device applications, one of which is high-speed optical intensity modulators for fiber optic systems. Modulators were first demonstrated in the 0.8 µm wavelength region using GaAs/AlGaAs,[2] but more recently attention has shifted to InGaAs/InAlAs,[3] InGaAs/InP[4] [5] and GaSb/AlGaSb[6] material systems which operate near the optical fiber loss minimum at 1.55 µm. To understand these devices, Miller et al. developed a theory for the QCSE[1] that was in good agreement with their experimental data for GaAs/AlGaAs MQWs. The theory was also successfully applied to InGaAs/InP MQWs.[7] In this paper we extend that theory to GaSb/AlGaSb and compare it with our experimental data. Because of the sizable lattice mismatch of 0.65% between GaSb and AlSb, strain effects can become very important in GaSb/AlSb MQWs. We show that the use of AlGaSb barriers significantly reduces these effects.
{"title":"Analysis of the quantum confined stark effect in GaSb/AlGaSb multiple quantum wells","authors":"E. C. Carr, T. Wood, C. Burrus, T. Chiu","doi":"10.1063/1.100261","DOIUrl":"https://doi.org/10.1063/1.100261","url":null,"abstract":"There has been much interest recently in the electric field dependence of the optical absorption in multiple quantum wells (MQWs). This phenomenon, known as the Quantum Confined Stark Effect (QCSE),[1] has many device applications, one of which is high-speed optical intensity modulators for fiber optic systems. Modulators were first demonstrated in the 0.8 µm wavelength region using GaAs/AlGaAs,[2] but more recently attention has shifted to InGaAs/InAlAs,[3] InGaAs/InP[4] [5] and GaSb/AlGaSb[6] material systems which operate near the optical fiber loss minimum at 1.55 µm. To understand these devices, Miller et al. developed a theory for the QCSE[1] that was in good agreement with their experimental data for GaAs/AlGaAs MQWs. The theory was also successfully applied to InGaAs/InP MQWs.[7] In this paper we extend that theory to GaSb/AlGaSb and compare it with our experimental data. Because of the sizable lattice mismatch of 0.65% between GaSb and AlSb, strain effects can become very important in GaSb/AlSb MQWs. We show that the use of AlGaSb barriers significantly reduces these effects.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"16 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120848312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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