Temperature-Dependent Characteristics of GaAs/AlGaAs Multiple Quantum Well Optical Modulators

R. Bailey, R. Sahai, C. Lastufka, K. Vural
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引用次数: 12

Abstract

Optical modulators using the quantum confined stark effect1 in GaAs/AlxGa1−x As multiple quantum wells (MQWs) have been studied extensively for their potential applications in integrated optoelectronic devices and optical computing systems. This paper investigates the increased performance that can be achieved by operating the device at low temperatures and by improving the quality of the MQW layers.
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GaAs/AlGaAs多量子阱光调制器的温度依赖特性
利用GaAs/AlxGa1−x As多量子阱(mqw)中的量子受限stark效应的光调制器在集成光电器件和光计算系统中的潜在应用已经得到了广泛的研究。本文研究了通过在低温下操作器件和通过提高MQW层的质量可以实现的性能提高。
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Nonlinear Optical Properties of Quantum-Confined CdSe Microcrystallites Inducing normally forbidden transitions within the conduction band of GaAs quantum wells Monte Carlo Simulation of Femtosecond Spectroscopy in Semiconductor Heterostructures Temperature-Dependent Characteristics of GaAs/AlGaAs Multiple Quantum Well Optical Modulators Second-order intersubband nonlinear optical susceptibilities of asymmetric quantum well structures.
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