Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device

Abstract

In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (tBio). It is shown that the sensitivity of the Bio-TFET improves as the drain doping concentration increases up to $1 \times 10^{20}$ cm−3. The tBio influence over the sensitivity increases for thicker biomaterials up to 40 nm and present lower increment for higher tBio. The highest sensitivity value obtained in this work was for a drain doping concentration of $1 \times 10^{20}$ cm−3 and for biomaterial thickness equal or higher than 40 nm.