{"title":"Charge-storage-type optoelectronic sensor with DOG-function characteristics","authors":"Y. Matsui, Y. Miyoshi","doi":"10.1109/ICSENS.2005.1597839","DOIUrl":null,"url":null,"abstract":"The optoelectronic sensors with DOG (difference of Gaussian)-function characteristics have been developed successfully for the application to the artificial visual cortex. The remarkable negative photoinduced current (PIC) and negative differential (ND) characteristics according to the forward bias voltage have been obtained for GaAs/GaAlAs multi-quantum well (MQW) structures with a charge-storage layer of InAs/GaAs short period superlattice (SSL). The characteristics are dependent on the crystal quality of the charge-storage layer and extremely enhanced by using the InAs/GaAs SSL compared with InGaAs alloy. In addition, we have designed an optoelectronic sensing circuit to mimic the mechanism of the selectivity to orientation, motion-direction and length of slit light in a human visual cortex","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2005.1597839","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The optoelectronic sensors with DOG (difference of Gaussian)-function characteristics have been developed successfully for the application to the artificial visual cortex. The remarkable negative photoinduced current (PIC) and negative differential (ND) characteristics according to the forward bias voltage have been obtained for GaAs/GaAlAs multi-quantum well (MQW) structures with a charge-storage layer of InAs/GaAs short period superlattice (SSL). The characteristics are dependent on the crystal quality of the charge-storage layer and extremely enhanced by using the InAs/GaAs SSL compared with InGaAs alloy. In addition, we have designed an optoelectronic sensing circuit to mimic the mechanism of the selectivity to orientation, motion-direction and length of slit light in a human visual cortex
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