S. Baek, S. Yang, Jae-young Ahn, B. Koo, K. Hwang, Siyoung Choi, C. Kang, J. Moon
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引用次数: 0
Abstract
We suggested the heterogeneously stacked oxide (HSO) for the future tunnel oxide of high density NAND flash memory. HSO has a structure of SiO2/a-Si/a-SiOx using the concept of tunnel barrier engineering. By employing HSO tunnel barrier, it was possible to fabricate the tunnel oxide, which is thicker physically and thinner electrically than the single layer tunnel oxide. The bandgap of a-SiOx can be modified, which made it possible to achieve tunnel barrier engineering without employing high-k material. By reducing the erase voltage, the reliabilities of NAND flash memory was improved.
我们提出了异质堆叠氧化物(HSO)作为未来高密度NAND闪存隧道氧化物的材料。HSO采用隧道屏障工程的概念，结构为SiO2/a- si /a- siox。通过使用HSO隧道势垒，可以制造出比单层隧道氧化物更厚、更薄的隧道氧化物。可以改变a-SiOx的带隙，从而实现不使用高k材料的隧道障壁工程。通过降低擦除电压，提高了NAND闪存的可靠性。
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