P. Royo, M. Ilegems, M. Moser, R. Hovel, H. P. Schweizer, K. Gulden
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引用次数: 0
Abstract
Visible top emitting microcavity light emitting diodes have been fabricated. The structure consists of two AlGaAs-AlAs Bragg reflectors surrounding an AlGaInP cavity with three GaInP quantum wells. The extraction efficiency of these structures can be maximized optimising the detuning between the quantum well emission and the cavity mode wavelength. We have grown a structure with parabolic profiles of thickness for the reflector layers only: the cavity mode wavelength was continuously shifted by 60 nm over the wafer. We measured a maximum of external quantum efficiency of 1.2% corresponding to a detuning of -12 nm in good agreement with analytical simulations. This result enabled us to estimate an internal quantum efficiency of 50% at a current density of 20 A/cm/sup 2/.
制备了可见顶发射微腔发光二极管。该结构由两个alggaas - alas Bragg反射器组成，围绕着一个具有三个GaInP量子阱的AlGaInP腔。通过优化量子阱发射和腔模波长之间的失谐，可以最大限度地提高这些结构的提取效率。我们已经培养了一个仅反射层厚度为抛物线型的结构:在晶圆上，腔模波长连续移动了60 nm。我们测量的最大外量子效率为1.2%，对应于-12 nm的失谐，与分析模拟很好地一致。这一结果使我们能够估计在电流密度为20 a /cm/sup /时的内部量子效率为50%。
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