{"title":"Physics of In(Ga)As-Based Heterostructures","authors":"G. Bastard, R. Ferreira","doi":"10.1364/qwoe.1989.ma4","DOIUrl":null,"url":null,"abstract":"The In(Ga)As-based heterostructures appear promizing for the implementation of monolithic opto-electronic devices operating in the 1.5 μm wavelength. In (Ga)As-InP and In(Ga)As-In(Al)As are the two main families which are lattice-matched to InP substrates and which can be fabricated by Molecular Beam Epitaxy or Metal-Organic-Chemical-Vapor Deposition. These growth techniques allow the formation of abrupt interfaces which separate the well-acting (Ga(In)As) from the barrier-acting materials (InP or Al(In)As).","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Wells for Optics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qwoe.1989.ma4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The In(Ga)As-based heterostructures appear promizing for the implementation of monolithic opto-electronic devices operating in the 1.5 μm wavelength. In (Ga)As-InP and In(Ga)As-In(Al)As are the two main families which are lattice-matched to InP substrates and which can be fabricated by Molecular Beam Epitaxy or Metal-Organic-Chemical-Vapor Deposition. These growth techniques allow the formation of abrupt interfaces which separate the well-acting (Ga(In)As) from the barrier-acting materials (InP or Al(In)As).
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