C. Shen, L. T. Yang, E. Toh, C. Heng, G. Samudra, Y. Yeo
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引用次数: 49
Abstract
A new non-local algorithm for accurately calculating the band-to-band tunneling current suitable for TCAD semiconductor simulators is proposed in this abstract. The proposed algorithm captures the essential physics of multi-dimensional tunneling in a 2D structure, and is designed to be robust and to achieve independence on the mesh grid. The new algorithm enables accurate modeling of T-FET and investigation of its device physics. Application on T-FET is demonstrated. The physical origin of the saturation of Id-Vd curve of T-FET is analyzed and clarified for the first time.
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