F. Lelarge, K. Leifer, A. Condó, V. Iakovlev, E. Martinet, C. Constantin, A. Rudra, E. Kapon
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引用次数: 2
Abstract
Self-ordered, strained InGaAs/GaAs quantum structures are grown on V-grooved GaAs substrates. Indium segregation at the bottom of the groove results in the formation of a vertical InGaAs quantum well structure with In-enriched composition. The lateral definition permits the growth of defect-free strained structures with thickness exceeding that achieved with planar epitaxy. We study the influence of the nominal thickness and In content on the photoluminescence peak wavelength of V-grooved quantum wires. Finally, room temperature emission at 1.12 /spl mu/m with relatively narrow linewidth (30-35 meV) is demonstrated.
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