Flexible threshold voltage 4-terminal FinFETs

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309915

Yongxun Liu, M. Masahara, K. Ishii, E. Suzuki

引用次数: 1

Abstract

Four-terminal (4T) FinFETs with independent double gates and an ideal rectangular cross-section Si-fin channel have successfully been fabricated by using newly developed orientation-dependent wet etching. The flexible threshold voltage (V/sub th/) controllability by one of the double gates arid by synchronized driving mode operation is systematically examined for the fabricated 4T-FinFFTs with different silicon (Si)-fin thicknesses (T/sub Si/'s). The experimental results reveal that the thinner T/sub Si/ is effective to accomplish a flexible V/sub th/ tuning. The developed processes are very attractive to the fabrication of the advanced 4T-FinFETs for flexible function VLSI circuits.

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灵活的阈值电压4端finfet

采用新发展的定向相关湿法蚀刻技术，成功地制备了具有独立双栅极和理想矩形截面Si-fin沟道的四端finfet。系统研究了不同硅(Si)鳍片厚度(T/sub Si/ s)的4t - finfft双栅极和同步驱动模式对柔性阈值电压(V/sub /s)的可控性。实验结果表明，较薄的T/sub Si/可以有效地实现柔性的V/sub /调谐。所开发的工艺对于用于柔性功能VLSI电路的先进4t - finfet的制造具有很大的吸引力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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