Growth temperature effects on graded InxAl1−xAs/GaAs buffer for metamorphic In0.70Ga0.30As/In0.53Al0.47As planar transistor on Ge-on-insulator(GeOI) substrate
S. Wicaksono, K. Tan, W. Loke, S. Yoon, Ivana, S. Subramanian, M. Owen, Y. Yeo
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引用次数: 1
Abstract
This paper aims to investigate the effect of substrate temperature on molecular beam epitaxy-grown InxAl1-xAs graded buffer layer. Atomic force microscopy, cross-sectional transmission electron microscopy, and secondary ion mass spectroscopy are used for wafer characterization. TEM images are used to estimate the threading dislocation density in the wafer. To demonstrate the feasibility of this growth method for device integration, HEMT and HBT are also fabricated.
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