Metrology of 3D IC with X-ray Microscopy and nano-scale X-ray CT

Abstract

Metrology of 3D integrated circuits (IC) have presented new challenges to existing metrology technologies, particularly in cases where the 3D structure of the sample must be measured non-destructively. X-ray microscopy, on the other hand, offers very deep penetration and better than 50 nm resolution, as well as ability to distinguish different elemental compositions. When combined with computed tomography (CT) technology, the full 3D structure of an IC an be obtained non-destructively at tens of nanometer accuracy, thus making x-ray nano-CT well suited for both metrology and failure analysis (FA) applications with 3D IC.