Determination of the impact of field enhancement in low-k dielectric breakdown

M. Bashir, L. Milor
{"title":"Determination of the impact of field enhancement in low-k dielectric breakdown","authors":"M. Bashir, L. Milor","doi":"10.1109/IITC.2009.5090353","DOIUrl":null,"url":null,"abstract":"Test structures have been designed to detect the impact of field enhancement on low-k dielectric breakdown at the tips of combs in comb structures. An analysis methodology has been proposed to separate the impact of area and field enhancement. Modeling utilizes characteristic lifetimes at various area ratios. The proposed model, when compared with direct fitting of the Weibull distribution, improves lifetime estimates by 2.5 orders of magnitude at 0.01% and reduces variance of the confidence bound by 73%.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Test structures have been designed to detect the impact of field enhancement on low-k dielectric breakdown at the tips of combs in comb structures. An analysis methodology has been proposed to separate the impact of area and field enhancement. Modeling utilizes characteristic lifetimes at various area ratios. The proposed model, when compared with direct fitting of the Weibull distribution, improves lifetime estimates by 2.5 orders of magnitude at 0.01% and reduces variance of the confidence bound by 73%.
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低k介电击穿中场增强影响的测定
设计了测试结构来检测场增强对梳状结构中梳尖处低k介电击穿的影响。提出了一种分析方法,以区分区域增强和现场增强的影响。建模利用不同面积比下的特征寿命。与威布尔分布的直接拟合相比,该模型在0.01%的情况下将寿命估计提高了2.5个数量级,并将置信边界的方差降低了73%。
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