C. Y. Chen, L. Goux, A. Fantini, A. Redolfi, G. Groeseneken, M. Jurczak
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引用次数: 1
Abstract
We explain in detail how to optimize the oxygen chemical potential profile of Ta2O5-based stack to improve switching speed at reduced operating current (<;10μA). Using industry-relevant programming scheme, we demonstrate an oxide-based RRAM stack giving large on/off ratio (~x200) while the good reliability properties are preserved.
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