{"title":"Assessment of a unipolar pulsed ramp for the characterisation of MOS gate oxide reliability","authors":"A. Martin, P. O'Sullivan, A. Mathewson","doi":"10.1109/IRWS.1995.493595","DOIUrl":null,"url":null,"abstract":"The unipolar pulsed ramp is compared to the commonly used staircase ramp. RVS and combined RVS/CVS measurements are performed on MOS gate oxides using both types of ramps with a wide range of ramp parameters. From the experiments it can be concluded that the unipolar pulsed ramp shows identical measurement results to the staircase ramp.","PeriodicalId":355898,"journal":{"name":"IEEE 1995 International Integrated Reliability Workshop. Final Report","volume":"244 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 International Integrated Reliability Workshop. Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1995.493595","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The unipolar pulsed ramp is compared to the commonly used staircase ramp. RVS and combined RVS/CVS measurements are performed on MOS gate oxides using both types of ramps with a wide range of ramp parameters. From the experiments it can be concluded that the unipolar pulsed ramp shows identical measurement results to the staircase ramp.
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