L. Anderson, S. Parikh, S. Nagalingam, C. Haidinyak
{"title":"A case study in a 100/spl times/reduction in sodium ions in a 0.8 /spl mu/m BiCMOS process using triangular voltage sweep","authors":"L. Anderson, S. Parikh, S. Nagalingam, C. Haidinyak","doi":"10.1109/IRWS.1995.493574","DOIUrl":null,"url":null,"abstract":"This case study shows how to use Triangular Voltage Sweep (TVS) to reduce Na and K in the backend of a triple-metal BiCMOS process from 10/sup 12/ ions/cm/sup 2/ to 10/sup 10/ ions/cm/sup 2/. TVS is compared to Bias Temperature Stress (BTS) techniques. While Capacitance-Voltage plots are good monitors for bulk contamination (metal, deposited oxide, etc.), data is presented which shows that TVS is superior for detecting surface-introduced mobile ions (photoresist, solvent strip, etc.). Process integration techniques and issues in the reduction of mobile ions are discussed. When TVS structures are put on product-like wafers, the mobile ions can be measured accurately and repeatably within 10 minutes of completing the process step-no alloy is required! Finally, the use of Ammonium Fluoride solutions to reduce the surface mobile ions are discussed.","PeriodicalId":355898,"journal":{"name":"IEEE 1995 International Integrated Reliability Workshop. Final Report","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 International Integrated Reliability Workshop. Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1995.493574","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This case study shows how to use Triangular Voltage Sweep (TVS) to reduce Na and K in the backend of a triple-metal BiCMOS process from 10/sup 12/ ions/cm/sup 2/ to 10/sup 10/ ions/cm/sup 2/. TVS is compared to Bias Temperature Stress (BTS) techniques. While Capacitance-Voltage plots are good monitors for bulk contamination (metal, deposited oxide, etc.), data is presented which shows that TVS is superior for detecting surface-introduced mobile ions (photoresist, solvent strip, etc.). Process integration techniques and issues in the reduction of mobile ions are discussed. When TVS structures are put on product-like wafers, the mobile ions can be measured accurately and repeatably within 10 minutes of completing the process step-no alloy is required! Finally, the use of Ammonium Fluoride solutions to reduce the surface mobile ions are discussed.
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