Co-design of 60GHz wideband front-end IC with on-chip Tx/Rx switch based on passive macro-modeling

Lixue Kuang, B. Chi, Haikun Jia, Zuochang Ye, Wen Jia, Zhihua Wang
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Abstract

Summary form only given. Co-design of 60GHz wideband front-end IC with on-chip Tx/Rx switch in 65nm CMOS is presented. Passive macro-modeling (pmm) is utilized to convert S-parameter files from passive component EM simulations to state-space models in circuit netlist format which could be used in commercial SPICE simulator for various analyses without convergence issues. The co-design of on-chip switch and LNA/PA could achieve wideband matching and reduce the effects of insertion loss of on-chip Tx/Rx switch. Combining with gain boosting technique in LNA design and lumped-component based design methodology, the implemented 60GHz front-end IC with on-chip Tx/Rx switch achieves 3dB gain bandwidth of 12GHz with maximum gain 17.8dB and minimum NF 5.6dB in Rx mode and 3dB gain bandwidth of 10GHz with saturated output power 5.6dBm in Tx mode, and only consumes 1.0mm×1.2mm die area (including pads).
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基于无源宏观建模的带片上收发开关的60GHz宽带前端集成电路协同设计
只提供摘要形式。提出了一种带片上Tx/Rx开关的60GHz宽带前端集成电路的协同设计。无源宏观建模(pmm)用于将无源元件电磁仿真的s参数文件转换为电路网表格式的状态空间模型,该模型可用于商用SPICE模拟器进行各种分析而不会出现收敛问题。片上开关与LNA/PA协同设计可以实现宽带匹配,减少片上Tx/Rx开关插入损耗的影响。结合LNA设计中的增益提升技术和基于集总元件的设计方法,所实现的带有片上Tx/Rx开关的60GHz前端IC,在Rx模式下,3dB增益带宽为12GHz,最大增益为17.8dB,最小NF为5.6dB;在Tx模式下,3dB增益带宽为10GHz,饱和输出功率为5.6dBm,且仅消耗1.0mm×1.2mm芯片面积(含衬垫)。
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