Analysis and design of high performance wireless power delivery using on-chip octagonal inductor in 65-nm CMOS

2015 28th IEEE International System-on-Chip Conference (SOCC) Pub Date : 2015-09-01 DOI:10.1109/SOCC.2015.7406992

Weijun Mao, Liusheng Sun, Junwei Xu, Jiajia Wu, Xiaolei Zhu

引用次数: 1

Abstract

This paper analyzes and designs inductive coupling power delivery (ICPD) system for 3-D stacked chips in SMIC 65-nm CMOS process. Two shapes of inductors, the rectangular and the octagonal inductor, are compared. Fully customized octagonal inductors with 500 μm diameter are optimized to improve power delivery efficiency. An octagonal inductor based ICPD consisting transmitter and receiver circuit is proposed by using H-bridge architecture and NMOS cross-gate rectifier. Simulation results show that the received power is 12 mW with a delivery efficiency of 12% and a power density of 59.5 mW/mm2. In order to achieve the higher power at the receiver side in some special applications, a four parallel connected inductors based wireless power link is designed, which reaches 34.2 mW.

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基于65纳米CMOS片上八角形电感的高性能无线供电分析与设计

分析并设计了中芯国际65纳米CMOS工艺下的三维堆叠芯片电感耦合功率传输系统。比较了两种形状的电感，矩形电感和八边形电感。直径500 μm的全定制八角形电感进行了优化，以提高功率传输效率。采用h桥结构和NMOS交叉栅整流器，提出了一种基于八角形电感的ICPD，由收发电路组成。仿真结果表明，接收功率为12 mW，输出效率为12%，功率密度为59.5 mW/mm2。为了在某些特殊应用中实现更高的接收端功率，设计了一种基于四电感并联的无线电源链路，其功率达到34.2 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 28th IEEE International System-on-Chip Conference (SOCC)

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