J.Q. Yang, J.F. Yang, J. Kang, X.Y. Liu, R. Han, P. Kirsch, H. Tseng, R. Jammy
{"title":"Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs","authors":"J.Q. Yang, J.F. Yang, J. Kang, X.Y. Liu, R. Han, P. Kirsch, H. Tseng, R. Jammy","doi":"10.1109/IIRW.2010.5706475","DOIUrl":null,"url":null,"abstract":"The extended flicker noise measurement incorporating with BTI evaluation is applied to investigate the bulk trapping density Nt in HK/MG stacks and the correlated BTI behaviors. An effective evaluating technique on BTI/TDDB is developed. This method will help to understand the physical original of BTI degradation.","PeriodicalId":332664,"journal":{"name":"2010 IEEE International Integrated Reliability Workshop Final Report","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2010.5706475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The extended flicker noise measurement incorporating with BTI evaluation is applied to investigate the bulk trapping density Nt in HK/MG stacks and the correlated BTI behaviors. An effective evaluating technique on BTI/TDDB is developed. This method will help to understand the physical original of BTI degradation.