{"title":"Deep understanding of random telegraph noise (RTN) effects on SRAM stability","authors":"Dongyuan Mao, Shaofeng Guo, Runsheng Wang, Mulong Luo, Ru Huang","doi":"10.1109/VLSI-TSA.2016.7480513","DOIUrl":null,"url":null,"abstract":"In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau caused by RTN are found, which reflect real circuit operation situations. The impacts of RTN amplitude, bitline capacity, operation frequency on Vmin are investigated in detail. Statistical results with impacts of RTN and process variations are also presented, which can be helpful for stability design and guard band prediction for SRAM.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2016.7480513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau caused by RTN are found, which reflect real circuit operation situations. The impacts of RTN amplitude, bitline capacity, operation frequency on Vmin are investigated in detail. Statistical results with impacts of RTN and process variations are also presented, which can be helpful for stability design and guard band prediction for SRAM.
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