Combination of Mass Metrology with Scatterometry to obtain bottom Width of deep Trenches : AM: Advanced Metrology

M. Haberjahn, S. Srichandan, Yulia Polak, Georg Ehrentraut, Franz Heider
{"title":"Combination of Mass Metrology with Scatterometry to obtain bottom Width of deep Trenches : AM: Advanced Metrology","authors":"M. Haberjahn, S. Srichandan, Yulia Polak, Georg Ehrentraut, Franz Heider","doi":"10.1109/asmc54647.2022.9792504","DOIUrl":null,"url":null,"abstract":"Three different in-line metrology techniques are combined to calculate the bottom width of trenches, 3μm and 42μm deep. CD-SEM gives the top critical dimension (CD) of trenches and scatterometry provides the trench depth. An average value for the trench bottom width or bottom CD is obtained from a mass loss determination with a pre- and post-etch measurement, in combination with the available top CD and depth values. This hybrid metrology approach has been demonstrated in case of the 3μm deep trench, where the conventional physical scatterometry modelling with rigorous coupled wave analysis (RCWA) is used to determine the trench depth and shape. The physical RCWA modelling is not applicable to the 42μm deep trenches with a pitch of >5μm. Hence, the proposed combined metrology method is verified with SEM cross-sections from wafers with different trench side-wall angles.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/asmc54647.2022.9792504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Three different in-line metrology techniques are combined to calculate the bottom width of trenches, 3μm and 42μm deep. CD-SEM gives the top critical dimension (CD) of trenches and scatterometry provides the trench depth. An average value for the trench bottom width or bottom CD is obtained from a mass loss determination with a pre- and post-etch measurement, in combination with the available top CD and depth values. This hybrid metrology approach has been demonstrated in case of the 3μm deep trench, where the conventional physical scatterometry modelling with rigorous coupled wave analysis (RCWA) is used to determine the trench depth and shape. The physical RCWA modelling is not applicable to the 42μm deep trenches with a pitch of >5μm. Hence, the proposed combined metrology method is verified with SEM cross-sections from wafers with different trench side-wall angles.
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质量计量与散射测量相结合获得深沟底宽:AM:先进的计量学
结合三种不同的在线测量技术,计算了3μm和42μm深的沟槽底部宽度。CD- sem给出了沟槽的顶临界维数(CD),散射测量提供了沟槽深度。沟槽底部宽度或底部CD的平均值是通过对蚀刻前后测量的质量损失测定,结合可用的顶部CD和深度值获得的。这种混合测量方法已经在3μm深的沟槽中进行了验证,其中使用传统的物理散射测量建模和严格耦合波分析(RCWA)来确定沟槽的深度和形状。物理RCWA模型不适用于间距大于5μm的42μm深沟槽。因此,采用不同沟槽侧壁角硅片的SEM截面验证了所提出的组合测量方法。
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