T. Matsuzaki, T. Onuki, S. Nagatsuka, H. Inoue, T. Ishizu, Y. Ieda, Naoto Yamade, H. Miyairi, M. Sakakura, T. Atsumi, Y. Shionoiri, K. Kato, T. Okuda, Yoshitaka Yamamoto, Masahiro Fujita, J. Koyama, S. Yamazaki
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Abstract
As the number of devices connected to the Internet increases, servers and mobile devices must process increasingly large volumes of data, and also accommodate the increasing demand for high-speed and large-capacity working memory keeping the power consumption low. This need is being fulfilled by emerging devices, such as resistive RAM, phase-change RAM, and MRAM [1], which realize high-speed, high-density and nonvolatile memory, significantly enhancing the performance of CPUs with integrated memories.
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