{"title":"Analysis of the effects of single event transients on an SAR-ADC based on charge redistribution","authors":"A. J. C. Lanot, T. Balen","doi":"10.1109/LATW.2014.6841908","DOIUrl":null,"url":null,"abstract":"This work presents a study on the effects of Single Event Transients on SAR A/D converters based on charge redistribution. The effects of SETs are analyzed considering the worst-case pulses for the 130nm CMOS process. In this work, the fault injection is concentrated on the switches of the capacitor array of the studied converter. Preliminary results show that the transient effects may change the state of one or more bits of conversion. This is due the fact that the affected stage may propagate an incorrect value to the remainder of the conversion, leading to multiple bit errors on the converted data. Moreover, a SET occurring on the switch connected to the common node of the capacitors may lead to an incorrect behavior that cannot be attenuated with the increasing on the sizing of the transistors, which suggests that additional fault tolerance techniques may be needed.","PeriodicalId":305922,"journal":{"name":"2014 15th Latin American Test Workshop - LATW","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 15th Latin American Test Workshop - LATW","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LATW.2014.6841908","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
This work presents a study on the effects of Single Event Transients on SAR A/D converters based on charge redistribution. The effects of SETs are analyzed considering the worst-case pulses for the 130nm CMOS process. In this work, the fault injection is concentrated on the switches of the capacitor array of the studied converter. Preliminary results show that the transient effects may change the state of one or more bits of conversion. This is due the fact that the affected stage may propagate an incorrect value to the remainder of the conversion, leading to multiple bit errors on the converted data. Moreover, a SET occurring on the switch connected to the common node of the capacitors may lead to an incorrect behavior that cannot be attenuated with the increasing on the sizing of the transistors, which suggests that additional fault tolerance techniques may be needed.
本文研究了单事件瞬态对基于电荷再分配的SAR a /D变换器的影响。针对130nm CMOS工艺的最坏情况,分析了set的影响。在本工作中,故障注入主要集中在所研究的变换器的电容阵列开关上。初步结果表明,瞬态效应可能改变一个或多个转换位的状态。这是由于受影响的阶段可能会将不正确的值传播到转换的其余部分,从而导致转换数据上的多个位错误。此外,在连接到电容器公共节点的开关上发生的SET可能导致不正确的行为,这种行为不能随着晶体管尺寸的增加而衰减,这表明可能需要额外的容错技术。