Yiheng Lin, H. Yasuda, H. Ho, M. Schiekofer, B. Benna, R. Wise, G. Xia
{"title":"Effect of thermal nitridation on phosphorus diffusion in SiGe and SiGe:C and its implication on diffusion mechanisms","authors":"Yiheng Lin, H. Yasuda, H. Ho, M. Schiekofer, B. Benna, R. Wise, G. Xia","doi":"10.1109/ISTDM.2014.6874641","DOIUrl":null,"url":null,"abstract":"The effectiveness of thermal nitridation in retarding P diffusion in SiGe and SiGe:C is investigated in this study. Three types of masking layers are used to make P diffuse under vacancy injection, interstitial injection, and inert annealing conditions. A secondary ion mass spectroscopy is used to measure the diffusion profiles.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874641","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effectiveness of thermal nitridation in retarding P diffusion in SiGe and SiGe:C is investigated in this study. Three types of masking layers are used to make P diffuse under vacancy injection, interstitial injection, and inert annealing conditions. A secondary ion mass spectroscopy is used to measure the diffusion profiles.
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