{"title":"A non-linear description of the bias dependent parasitic resistances of quarter micron MOSFETs","authors":"E. Gondro, P. Klein, F. Schuler, O. Kowarik","doi":"10.1109/SMELEC.1998.781157","DOIUrl":null,"url":null,"abstract":"A new model description for source and drain resistances of LDD devices is proposed. It includes the dependence on the gate, bulk and drain bias. Measurements on a 0.25 /spl mu/m gate length device show excellent agreement with circuit simulation.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.1998.781157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new model description for source and drain resistances of LDD devices is proposed. It includes the dependence on the gate, bulk and drain bias. Measurements on a 0.25 /spl mu/m gate length device show excellent agreement with circuit simulation.
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