Lei Zhu, M. Bai, X. P. Wang, Y. H. Huang, K. Ong, A. Sumarlina, W. Park, Z. Mo, Peck Y. Zheng, S. P. Zhao, J. Lam
{"title":"Idss failure investigated by SIMS profiling and TCAD simulation","authors":"Lei Zhu, M. Bai, X. P. Wang, Y. H. Huang, K. Ong, A. Sumarlina, W. Park, Z. Mo, Peck Y. Zheng, S. P. Zhao, J. Lam","doi":"10.1109/IPFA.2014.6898139","DOIUrl":null,"url":null,"abstract":"A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.
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