{"title":"Optical input power tolerance of InGaAsP electroabsorption modulator","authors":"N. Hoshi, T. Mitsuma, H. Tanaka, Y. Matsushtma","doi":"10.1109/ICIPRM.1999.773648","DOIUrl":null,"url":null,"abstract":"We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"734 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias.
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