Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, H. Lan, C. W. Liu, Y.-H. Huang, B. Hung, K.T. Chan, Michael Huang, M. Yang
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引用次数: 1
Abstract
Impact of via-last through-silicon via (TSV) on 28nm node devices is investigated. The stress field of TSV is affected by the back-end-of-line (BEOL) dielectrics. The absolute value of radial stress (|σr|) is different from that of tangential stress (|σθ|) on silicon, which leads to the asymmetric keep-out zone (KOZ). The physics behind the asymmetry is also described. A modified KOZ model considering the asymmetric stress field is proposed and verified by experiment data.
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