O. Rozeau, J. Jomaah, C. Boussey, C. Raynaud, J. Pelloie, F. Balestra
{"title":"Comparison between fully- and partially-depleted SOI MOSFET's for low-power radio-frequency applications","authors":"O. Rozeau, J. Jomaah, C. Boussey, C. Raynaud, J. Pelloie, F. Balestra","doi":"10.1109/SOI.1999.819839","DOIUrl":null,"url":null,"abstract":"During the past decade, several works have shown that SOI technologies are very promising for radiofrequency applications (Eggert et al., 1997). In this work, we compare two different types of SOI architecture, i.e. fully- and partially-depleted MOSFETs, operating at RF range and under low-voltage conditions.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819839","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
During the past decade, several works have shown that SOI technologies are very promising for radiofrequency applications (Eggert et al., 1997). In this work, we compare two different types of SOI architecture, i.e. fully- and partially-depleted MOSFETs, operating at RF range and under low-voltage conditions.
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