{"title":"Thermal behavior of atomic hydrogen passivated acceptors in p-InP","authors":"E. Rao, B. Theys, Y. Gottesman, H. Bissessnr","doi":"10.1109/ICIPRM.1999.773680","DOIUrl":null,"url":null,"abstract":"The Zn and Be doped (1 to 2/spl times/10/sup 18/ cm/sup -3/) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450/spl deg/C, the reactivation of holes is monitored to determine activation energies, /spl sim/0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The Zn and Be doped (1 to 2/spl times/10/sup 18/ cm/sup -3/) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450/spl deg/C, the reactivation of holes is monitored to determine activation energies, /spl sim/0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.
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