{"title":"Gain linearity and bandwidth improvement of InP-based transimpedance amplifiers by feedback loop designs","authors":"F. Chien, Y. Chan","doi":"10.1109/ICIPRM.1999.773646","DOIUrl":null,"url":null,"abstract":"InP-based transimpedance amplifiers with two different active feedback loop designs, i.e. a common-gate FET (CG-FET) feedback and a gate-source connected FET (GS-FET) feedback, have been fabricated, characterized, and compared with each other. Owing to a better linearity of a feedback resistance in GS-FETs, amplifiers with this feedback design exhibit a large/sup /spl Delta/Vout/ at a small input current. Furthermore, the operational bandwidth of GS-FET feedback amplifier is also improved by eliminating the associated parasitic effect.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
InP-based transimpedance amplifiers with two different active feedback loop designs, i.e. a common-gate FET (CG-FET) feedback and a gate-source connected FET (GS-FET) feedback, have been fabricated, characterized, and compared with each other. Owing to a better linearity of a feedback resistance in GS-FETs, amplifiers with this feedback design exhibit a large/sup /spl Delta/Vout/ at a small input current. Furthermore, the operational bandwidth of GS-FET feedback amplifier is also improved by eliminating the associated parasitic effect.
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