T. Schrimpf, Dirk Piester, H. Wehmann, P. Bonsch, D. Wullner, A. Schlachetzki, C. Mendorf, H. Lakner
{"title":"Preparation and characterization of InGaAs quantum wires on V-groove patterned InP","authors":"T. Schrimpf, Dirk Piester, H. Wehmann, P. Bonsch, D. Wullner, A. Schlachetzki, C. Mendorf, H. Lakner","doi":"10.1109/ICIPRM.1999.773744","DOIUrl":null,"url":null,"abstract":"We report on the characterization of InGaAs quantum wells (QWL) and wires (QWR) on V-groove patterned InP substrates. The quality of the QWL on the (100)-surface between the grooves is discussed concerning different sample preparation methods. The material composition and the thickness of these QWL is determined. The geometrical shape of the QWR in the tip of the V-grooves is measured by atomic-force microscopy (AFM) and compared with transmission-electron microscopy (TEM). The dependence of the QWR photoluminescence (PL) on sample temperature is studied.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773744","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report on the characterization of InGaAs quantum wells (QWL) and wires (QWR) on V-groove patterned InP substrates. The quality of the QWL on the (100)-surface between the grooves is discussed concerning different sample preparation methods. The material composition and the thickness of these QWL is determined. The geometrical shape of the QWR in the tip of the V-grooves is measured by atomic-force microscopy (AFM) and compared with transmission-electron microscopy (TEM). The dependence of the QWR photoluminescence (PL) on sample temperature is studied.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
