16Mb Split Gate Flash Memory with Improved Process Window

J. Yater, M. Suhail, S. Kang, J. Shen, C. Hong, T. Merchant, R. Rao, H. Gasquet, K. Loiko, B. Winstead, S. Williams, M. Rossow, W. Malloch, R. Syzdek, G. Chindalore
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引用次数: 4

Abstract

This paper reports on recent bitcell optimizations that improve drive current and program performance. The 16 Mb and 32 Mb array results are best to-date for nanocrystal memories and suggest a robust, reliable array operation.
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16Mb分割门闪存与改进的进程窗口
本文报告了最近的位单元优化,提高了驱动电流和程序性能。16mb和32mb的阵列结果是迄今为止纳米晶存储器中最好的,表明了一种强大、可靠的阵列操作。
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