{"title":"PBTI Study in Native High Voltage Device","authors":"B. Tsai, Z. Peng, H. Chuang, C. F. Chen, C. Hsu","doi":"10.1109/IPFA47161.2019.8984914","DOIUrl":null,"url":null,"abstract":"The native HV device (w/o Vt implantation) and regular HV device (w/i Vt implantation) of PBTI Vt shift behaviors are investigated in this paper, and an envisioned mechanism is provided. Native HV device showed a high Vt shift at the beginning of Vg stress, the Ig-Vg curve measured supported this observation; also, the mismatch characterizations were also measured and compared in both native and regular HV devices.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"2 8","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The native HV device (w/o Vt implantation) and regular HV device (w/i Vt implantation) of PBTI Vt shift behaviors are investigated in this paper, and an envisioned mechanism is provided. Native HV device showed a high Vt shift at the beginning of Vg stress, the Ig-Vg curve measured supported this observation; also, the mismatch characterizations were also measured and compared in both native and regular HV devices.
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