K. Ronse, E. Hendrickx, M. Goethals, R. Jonckheere, G. Vandenberghe
{"title":"Status and challenges of extreme-UV lithography","authors":"K. Ronse, E. Hendrickx, M. Goethals, R. Jonckheere, G. Vandenberghe","doi":"10.1109/VTSA.2009.5159309","DOIUrl":null,"url":null,"abstract":"In this paper, the experiences on full field EUVL lithography are reviewed. Besides the imaging performance of the EUV ADT at IMEC, also the progress in resists and reticles are discussed and compared to the production requirements for EUV lithography.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":" 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159309","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the experiences on full field EUVL lithography are reviewed. Besides the imaging performance of the EUV ADT at IMEC, also the progress in resists and reticles are discussed and compared to the production requirements for EUV lithography.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
