SIMOX SOI surface smoothing for gate oxide integrity and reliability

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819880

L. Allen, D. Fenner, W. Skinner, R. Chandonnet, S.E. Deziel, R. Torti, N. Toyoda

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Abstract

A significant reliability aspect regarding commercial application of SOI is the consistency of the device gate oxide integrity (GOI). This research focuses on the smoothing of SIMOX SOI surfaces for advanced CMOS applications with improved GOI and reliability. As shown in an atomic force microscope (AFM) image, as-received samples of full dose single-implant SIMOX annealed in an Ar ambient show a distinct [100] tiling with a measured peak-to-valley surface roughness ranging from /spl sim/55 /spl Aring/ to /spl sim/70 /spl Aring/. These [100] faceted surface features result from silicon surface bond reconstruction during the 1310/spl deg/C SIMOX anneal temperature into their lowest free energy configuration. For the specific samples examined, the facets were typically 0.5 /spl mu/m in diameter with a mean deviation R(a) of 7.1 /spl Aring/ and R(rms) at 8.9 /spl Aring/. In order to reduce the faceting features as well as the surface roughness, a gas cluster ion beam (GCIB) method of surface smoothing was applied to the full dose single implant SIMOX samples.

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SIMOX SOI表面平滑栅极氧化物的完整性和可靠性

关于SOI的商业应用，一个重要的可靠性方面是器件栅极氧化物完整性(GOI)的一致性。本研究的重点是SIMOX SOI表面的平滑，用于先进的CMOS应用，提高GOI和可靠性。如原子力显微镜(AFM)图像所示，在氩气环境中退火的全剂量单植入SIMOX样品显示出明显的[100]平铺，测量到的峰谷表面粗糙度范围为/spl sim/55 /spl sim/70 /spl Aring/。这些[100]面形特征是在1310/spl℃的SIMOX退火温度下硅表面键重建到其最低自由能构型的结果。对于所检测的特定样品，切面直径通常为0.5 /spl mu/m，平均偏差R(a)为7.1 /spl Aring/， R(rms)为8.9 /spl Aring/。为了降低SIMOX样品的表面粗糙度，采用气簇离子束(GCIB)方法对SIMOX样品进行表面平滑处理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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