{"title":"Atomically controlled heteroepitaxy of Ge on a ferromagnetic heusler alloy for a vertical-type spin transistor","authors":"S. Yamada, M. Miyao, K. Hamaya","doi":"10.1109/ISTDM.2014.6874656","DOIUrl":null,"url":null,"abstract":"Using molecular beam epitaxy (MBE) techniques, we developed a growth technique of epitaxial Ge layers on a ferromagnetic alloy, Fe3Si. As a result, we demonstrated a basic structure of a vertical-type Ge-channel spin transistor on a Si platform.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874656","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Using molecular beam epitaxy (MBE) techniques, we developed a growth technique of epitaxial Ge layers on a ferromagnetic alloy, Fe3Si. As a result, we demonstrated a basic structure of a vertical-type Ge-channel spin transistor on a Si platform.
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