A large-signal model for SOI MOSFETs including dynamic self-heating effects

Abstract

This paper presents a large-signal SOI MOSFET model which explicitly includes self-heating effects. Our goal is to develop a model suitable for SOI monolithic microwave IC (MMIC) design which clearly requires a large-signal model accurate at high frequencies. In addition, the model must include the dynamic thermal response of the device since MMICs often contain microwave, RF, baseband, and bias sections spanning the range from DC to several GHz. At DC, self-heating can be modeled with a simple thermal resistance, while at microwave frequencies the temperature is effectively constant. However, at intermediate frequencies the temperature lags the applied power so the model must accurately represent the thermal dynamics in the device.