The Si precipitation problem in aluminium alloy (Al-Si-Cu) metallization

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI:10.1109/SMELEC.1998.781141

Y. Hua, E. Liu, L. An, D.K.W. Chau

引用次数: 2

Abstract

Some lots of wafers were reported with low yield due to ANADC pattern functional failure. SEM, EDX and 155 Wright etch techniques were used to identify the root causes. Cross sectional results found the nodules on substrate at the contact area. EDX analysis confirmed them to be silicon nodules. After 155 Wright etch [100] square silicon crystalline hillocks were found on the substrate at the contact area. It is concluded that silicon nodules on the substrate at the contact area had resulted in an open circuit and low yield. These silicon nodules were due to Si precipitation on the substrate of the contacts.

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铝合金(Al-Si-Cu)金属化过程中Si析出问题

据报道，由于ANADC模式功能失效，一些批次的晶圆产量低。SEM, EDX和155 Wright蚀刻技术用于确定根本原因。横截面结果显示，在接触区域基底上有结核。EDX分析证实它们是硅结核。经过155莱特蚀刻[100]后，在衬底接触区域发现方形硅晶丘。结果表明，接触区衬底上的硅结核导致了开路和低成品率。这些硅结节是由于硅沉淀在触点的衬底上造成的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)

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